DKK 0,00
(fragt pris: 0,00)
Infineon IKW15N120H3FKSA1
Varenr.: [9406998] | Producent: Infineon | Model-nr.: IKW15N120H3FKSA1 | EAN: 2050009801618
Fjernlager (2-3 hverdage)
Varen er på fjernlager, leveringstiden er 2-3 hverdage. Mere info
Leveringsmuligheder - Vælges ved checkout
Instabox - Pakkeboks
39,00
GLS - Pakkeshop
39,00
DAO - Hjemmelevering om natten og i de tidlige morgentimer
Perfekt til arbejdsdage - Levering inden kl. 06:00 - Klar når du vågner
45,00
GLS - Levering til hoveddøren
59,00
Afhentning i vores Pick-up point i Ringsted
19,00
Vis alle leveringsmuligheder (5)
DKK
72,00
ex. moms 57,60
Total inkl. fragt
111,00
Funktionen kræver at man er logget ind. Opret en bruger og brug vores smarte liste system til at holde styr på fremtidige indkøb, faste indkøb eller ønskelister.
Opret bruger
Login
Opret bruger
Login
Send på mail
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 1100 to 1600V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and lowsaturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 1100 to 1600V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and lowsaturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.